| PART |
Description |
Maker |
| MCM72BF64SG66 MCM72BF32 MCM72BF32SG60 MCM72BF32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| MPC2107SG15 MPC2104 MPC2104SG66 MPC2105SG66 MPC210 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MPC2104P MPC2104PDG66 MPC2105PDG66 |
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| M29W400DB45M1 M29W400DB45M1E M29W400DB45M1F M29W40 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29F400B M29F400T 5127 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M29W400BB M29W400BB120M1T M29W400BB120M6T M29W400B |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| LPC1774FBD208 LPC1776FBD208 LPC1778FBD208 LPC1777F |
128kB flash, 40kB SRAM, USB, LQFP208 package
256kB flash, 80kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP208 package
512kB flash, 96kB SRAM, USB, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, LQFP208 package
512kB flash, 96kB SRAM, Ethernet, USB, LCD, TFBGA208 package
512kB flash, 96kB SRAM, Ethernet, USB, LQFP144 package
512kB flash, 96kB SRAM, Ethernet, USB, TFBGA208 package
|
NXP Semiconductors
|
| GSM31P256KB-I66 GSM31P512KB-I66 |
x64 Interleaved Burst Mode SRAM Module
256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器)
512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|
